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SPP9972 - P-Channel MOSFET

General Description

The SPP9972 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Key Features

  • -60V/-18A,RDS(ON)=25mΩ@VGS=-10V.
  • -60V/-12A,RDS(ON)=33mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L package design PIN.

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Datasheet Details

Part number SPP9972
Manufacturer SYNC POWER
File Size 475.92 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP9972 Datasheet

Full PDF Text Transcription for SPP9972 (Reference)

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SPP9972 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9972 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell dens...

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mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPP9972 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Power Management in Note book  Powered System  DC/DC Converter  Load Switch FEATURES  -60V/-18A,RDS(ON)=25mΩ@VGS=-10V  -60V/-12A,RDS(ON)=33mΩ@VGS=-4.